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| inchange semiconductor product specification silicon npn power transistors BU508D description ? with to-3pn package ? high voltage ? built-in damper diode applications ? for use in large screen colour deflection circuits. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 5 a i cm collector current (pulse) 8 a i b base current 2.5 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature 150 ?? t stg storage temperature -65-150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.0 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU508D characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v cesat collector-emitter saturation voltage i c =4.5a; i b =2.0a 1.0 v v besat base-emitter saturation voltage i c =4.5a; i b =2.0a 1.5 v h fe dc current gain i c =1a ; v ce =5v 8 i ces collector cut-off current v ce =1500v; v be =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 300 ma v f diode forward voltage i f =4.0a 2.0 v f t transition frequency i c =0.1a ; v ce =5v 4 mhz cob collector capacitance i e =0;v cb =10v;f=1mhz 125 pf t s storage time 7 | s t f fall time i c =4.5a ; i b =1.4a l b =10 | h 1.0 | s inchange semiconductor product specification 3 silicon npn power transistors BU508D package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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